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| SPN04N60S5 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in SOT 223 VDS RDS(on) ID 600 0.95 0.8 SOT-223 4 V A * Ultra low gate charge * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance 3 2 1 VPS05163 Type SPN04N60S5 Package SOT-223 Ordering Code Q67040-S4211 Marking 04N60S5 Maximum Ratings Parameter Continuous drain current TA = 25 C TA = 70 C Pulsed drain current, tp limited by Tjmax TA = 25 C Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, T A = 25C Symbol ID Value 0.8 0.65 Unit A ID puls VGS VGS Ptot Tj , Tstg 3 20 30 1.8 -55... +150 W C V Operating and storage temperature Rev. 2.2 Page 1 2005-02-21 SPN04N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 4.5 A, Tj = 125 C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Symbol min. RthJS RthJA Values typ. max. Unit Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) - 20 110 - 70 K/W Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 C Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=200, VGS=V DS VDS=600V, VGS=0V, Tj=25C, Tj=150C Values typ. 700 4.5 0.5 0.8 2.3 20 max. 5.5 600 3.5 - Unit V V(BR)DS VGS=0V, ID=4.5A A 1 50 100 0.95 nA Gate-source leakage current IGSS VGS=20V, VDS=0V VGS=10V, ID=2.8A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.2 Page 2 2005-02-21 SPN04N60S5 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance g fs Ciss Coss Crss V GS=0V, V DS=0V to 480V V DS2*I D*RDS(on)max, ID=0.65A V GS=0V, V DS=25V, f=1MHz Symbol Conditions min. V DD=350V, V GS=0/10V, ID=0.8A, RG=18 Values typ. 1 600 325 15 20 35 40 20 130 30 max. - Unit S pF Effective output capacitance,2) Co(er) energy related Effective output capacitance,3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time t d(on) tr t d(off) tf pF - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=350V, ID=0.8A - 4.1 9.2 17 8 - nC VDD=350V, ID=0.8A, VGS=0 to 10V V(plateau) VDD=350V, ID=0.8A V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 2C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.2 Page 3 2005-02-21 SPN04N60S5 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0V, IF=IS VR=350V, IF =IS , diF/dt=100A/s Symbol IS ISM Conditions min. TA=25C Values typ. 0.85 200 1.2 max. 0.8 3 1.05 - Unit A V ns C Rev. 2.2 Page 4 2005-02-21 SPN04N60S5 1 Power dissipation Ptot = f (TA) 1.9 SPN04N60S5 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T A=25C 10 1 W 1.6 1.4 A 10 0 Ptot 1 0.8 0.6 ID 10 -1 1.2 10 -2 0.4 0.2 0 0 10 -3 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 20 40 60 80 100 120 C 160 10 1 10 2 TA 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 2 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS A 14 K/W 10 1 13V 11V 12 11 10 Z thJC 10 0 ID 9 8 7 9V 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6 5 4 3 2 1 7V 4 8 12 16 20 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 0 0 V 26 tp VDS Page 5 Rev. 2.2 2005-02-21 SPN04N60S5 5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 8 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 5 A 20V 12V 10V 9.5V m 9V 8.5V RDS(on) 4 ID 8V 3.5 4 7.5V 3 2.5 7V 2 6.5V 6V 2 1.5 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 1 2 3 4 5 6 7 0 0 5 10 15 V VDS 25 1 0 A ID 8.5 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.65 A, VGS = 10 V 5.5 SPN04N60S5 8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 16 4.5 A RDS(on) 4 12 ID 98% typ C 3.5 3 10 8 2.5 2 1.5 1 0.5 0 -60 -20 20 60 100 180 6 4 2 0 0 2 4 6 8 10 12 14 16 Tj V 20 VGS Rev. 2.2 Page 6 2005-02-21 SPN04N60S5 9 Typ. gate charge VGS = f (QGate ) parameter: ID = 0.8 A pulsed 16 V 0.2 VDS max SPN04N60S5 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 1 SPN04N60S5 A 12 0.8 V DS max VGS 10 0 8 6 IF 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 4 8 12 16 20 nC 10 4 2 10 -2 0 0 0 28 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPN04N60S5 12 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 V pF 10 3 V(BR)DSS 680 660 640 620 600 580 560 540 -60 10 -1 0 10 0 Ciss C 10 2 Coss 10 1 Crss -20 20 60 100 C 180 10 20 30 40 50 60 70 80 V 100 Tj VDS Page 7 Rev. 2.2 2005-02-21 SPN04N60S5 13 Typ. Coss stored energy Eoss=f(VDS) 3.5 J 2.5 Eoss 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Rev. 2.2 Page 8 2005-02-21 SPN04N60S5 Rev. 2.2 Page 9 2005-02-21 SPN04N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 Page 10 2005-02-21 |
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